类型 | 描述 |
---|---|
系列: | 25CS |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 4Mb (512K x 8) |
内存接口: | SPI |
时钟频率: | 8 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-XFBGA, WLCSP |
供应商设备包: | 8-WLCSP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AM29DL323DT-90WDIRochester Electronics |
NOR FLASH, 2MX16, 90NS |
|
MT53E2DBDS-DCMicron Technology |
LPDDR4 4G DDP |
|
MT29F64G08CBABAL84A3WC1-MMicron Technology |
MLC 64G DIE 8GX8 |
|
74S472AVRochester Electronics |
4K BIT (512 X 8) BIP TTL PROM TR |
|
R1QDA7236ABG-22IA1Rochester Electronics |
STANDARD SRAM, 2MX36 |
|
M10042040108X0IWAYRenesas Electronics America |
IC RAM 4MBIT 108MHZ 8DFN |
|
7025S70GBRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
S34ML04G204BHI010ZRochester Electronics |
4 GB, 3 V, SLC NAND FLASH |
|
S29GL128S11DHBV23Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 64FBGA |
|
MT29VZZZAD9FQFSM-046 W.G9KMicron Technology |
ALL IN ONE MCP 1056G |
|
M10162040108X0PSARRenesas Electronics America |
IC RAM 16MBIT SPI 108MHZ 8SOIC |
|
NM93C46LEMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |
|
MT40A1G16KNR-062E:E TRMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |