English
简体中文
925 MHZ GROUND IND SLOT OMNI
IC RAM 8MBIT 108MHZ 8SOIC
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | RAM |
| 技术: | MRAM (Magnetoresistive RAM) |
| 内存大小: | 8Mb (2M x 4) |
| 内存接口: | - |
| 时钟频率: | 108 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 85°C |
| 安装类型: | Surface Mount |
| 包/箱: | 8-SOIC (0.209", 5.30mm Width) |
| 供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
7008L20JGI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 84PLCC |
|
|
CG7254AMRochester Electronics |
SPECIAL |
|
|
CY7C1347G-200AXCKJRochester Electronics |
SYNC RAM |
|
|
R1QAA7236RBG-22RB0Rochester Electronics |
STANDARD SRAM, 2MX36 |
|
|
EDB4432BBBJ-1DAAT-F-R TRMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
|
CY7C1313KV18-250BZCKGRochester Electronics |
SYNC RAM |
|
|
MT29F4G01ABBFDWB-IT:F TRMicron Technology |
IC FLASH 4GBIT SPI 83MHZ 8UPDFN |
|
|
EM6HE08EW3F-12HEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
16-4369-01Cypress Semiconductor |
IC MEM NOR 56TSOP |
|
|
CY7C194-35SCQRochester Electronics |
DUAL PORT RAM |
|
|
MT25QL128ABB1ESE-0AUT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 8SO |
|
|
R1QEA7218ABG-22IB0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
|
MT53E512M32D2NP-046 WT:E TRMicron Technology |
LPDDR4 16G 512MX32 FBGA WT DDP |