English
简体中文
MOSFET N-CH 650V 100A TO264
MOSFET N-CH 650V 13.8A D2PAK
54F175 D-TYPE FLIP-FLOP, 4-BIT
IC MEM NOR 56TSOP
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
CY7C194-35SCQRochester Electronics |
DUAL PORT RAM |
|
|
MT25QL128ABB1ESE-0AUT TRMicron Technology |
IC FLASH 128MBIT SPI 133MHZ 8SO |
|
|
R1QEA7218ABG-22IB0Rochester Electronics |
STANDARD SRAM, 4MX18, 0.45NS |
|
|
MT53E512M32D2NP-046 WT:E TRMicron Technology |
LPDDR4 16G 512MX32 FBGA WT DDP |
|
|
CG7354ATRochester Electronics |
SPECIAL |
|
|
MT40A1G8SA-062E AIT:E TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
5962-3829409MXARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
|
5962-8861011ZARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
|
MT53E1G32D4NQ-053 WT:EMicron Technology |
LPDDR4 32G 1GX32 FBGA WT QDP |
|
|
MT29F4T08CTHBBM5-3R:BMicron Technology |
IC FLASH 4TB PARALLEL 333MHZ |
|
|
MT29AZ5A3CHHTB-18AAT.109 TRMicron Technology |
IC FLASH RAM 4G PARALLEL |
|
|
MT25QU256ABA8E12-0AUT TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
|
8403611JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |