







RF SHIELD 4.75" X 5" T/H
RF SHIELD 2.75" X 5.75" T/H
1/2DR 6PT DP UNIV SKT 13/16
IC FLASH 1TB MMC
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 1Tb (128G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字,页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
100422FC10Rochester Electronics |
100422 - 256 X 4 BIT SRAM |
|
|
M5M5V108DFP-70H#STRochester Electronics |
SRAM 1M-BIT (128K X 8) |
|
|
5962-3826701MXAC7200Rochester Electronics |
READ ONLY MEMORY (EEPROM), MONOL |
|
|
CG7779AATRochester Electronics |
SPECIAL |
|
|
MT29F4G01ABAFD12-AAT:F TRMicron Technology |
IC FLASH 4GBIT SPI 24TPBGA |
|
|
IS66WV51216EALL-70BLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC PSRAM 8MBIT PARALLEL 48TFBGA |
|
|
CY62187EV18LL-70BAXICypress Semiconductor |
MICROPOWER SRAMS |
|
|
S25FS512SDSNFB010Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 8WSON |
|
|
MT53E2G32D4DT-046 AIT:A TRMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
71T75802S133PFRochester Electronics |
1M X 18, SYNCHRONOUS ZBT SRAM |
|
|
S99GL128S90TFI010Flip Electronics |
PRODUCTION |
|
|
MT62F1G64D8CH-036 WT:AMicron Technology |
IC FLASH 64GBIT 2.75GHZ |
|
|
7133SA70GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |