类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | RAM |
技术: | MRAM (Magnetoresistive RAM) |
内存大小: | 16Mb (4M x 4) |
内存接口: | - |
时钟频率: | 108 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.71V ~ 2V |
工作温度: | -40°C ~ 85°C |
安装类型: | Surface Mount |
包/箱: | 8-WDFN Exposed Pad |
供应商设备包: | 8-DFN (5x6) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY27C512-150ZCRochester Electronics |
OTP ROM, 64KX8, 150NS PDSO28 |
|
MT52L1G32D4PG-107 WT:BMicron Technology |
IC DRAM 32GBIT 933MHZ 178FBGA |
|
DS28E05X-047-B5+TRochester Electronics |
IC EEPROM 896B 1-WIRE 4WLP |
|
5962-8687511YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
70V3599S133BFGI8Renesas Electronics America |
IC SRAM 4.5MBIT PAR 208CABGA |
|
CAJ25128VI-GT3Rochester Electronics |
128KB SPI SER CMOS EEPROM |
|
CAT25020VE+GT3Rochester Electronics |
IC EEPROM 2KBIT SPI 10MHZ 8SOIC |
|
ACE1502EMT8Rochester Electronics |
8-BIT, EEPROM, ACE1502 CPU |
|
MT29F2T08CUHBBM4-3R:BMicron Technology |
IC FLASH 2TB PARALLEL 333MHZ |
|
MT53E384M64D4NK-046 WT:EMicron Technology |
LPDDR4 24G 384MX64 FBGA QDP |
|
R1Q2A7236ABG-40IA1Rochester Electronics |
72-MB DDR II+ SRAM (2M X 36-BIT) |
|
PY7C1049CV33-15ZIRochester Electronics |
4-MBIT (512K X 8) SRAM |
|
R1LP0408CSB-7UI#D0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |