English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Asynchronous |
| 内存大小: | 64Kb (8K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 28-CDIP (0.300", 7.62mm) |
| 供应商设备包: | 28-CDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
5962-8700207UARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48LCC |
|
|
CYPT1545AV18-250GCMBCypress Semiconductor |
IC SRAM 72MBIT PARALLEL 165CCGA |
|
|
R1LP0408CSP-7LC#BWRochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
|
MT29F4T08EULCEM4-R:CMicron Technology |
IC FLASH 4TB PARALLEL |
|
|
EDB4432BBBJ-1D-F-RMicron Technology |
IC DRAM 4GBIT PARALLEL 134FBGA |
|
|
S72XS256RE0AHBJ23Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
|
|
MT29AZ5A5CMGWD-18AIT.87C TRMicron Technology |
NAND MCP 8G |
|
|
IS25LP064D-JBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 8SOIC |
|
|
5962-8976403MXARenesas Electronics America |
IC SRAM 32KBIT PARALLEL SB48 |
|
|
MT53D1024M32D4DT-053 AIT:D TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 200VFBGA |
|
|
CY62256VLL-70SNCTRochester Electronics |
STANDARD SRAM, 32KX8, 70NS |
|
|
5962-8687521UARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48FPACK |
|
|
LE24LA322CSTL2-TFM-ERochester Electronics |
IC EEPROM 32KBIT I2C 400KHZ |
