类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 256Mb (32M x 8) |
内存接口: | SPI |
时钟频率: | 133 MHz |
写周期时间 - 字,页: | 8ms, 2.8ms |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 24-TBGA |
供应商设备包: | 24-T-PBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D768M64D8NZ-046 WT:E TRMicron Technology |
IC DRAM 48GBIT 2133MHZ 376WFBGA |
|
CG7661AARochester Electronics |
SPECIAL |
|
LE25LB963CT-TE-L-HRochester Electronics |
SERIAL SPI EEPROM |
|
MR25H10MDCREverspin Technologies, Inc. |
IC RAM 1MBIT SPI 40MHZ 8DFN |
|
SM661PE8-ACSSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 ML |
|
CAT24AA02WGIRochester Electronics |
IC EEPROM 2KBIT I2C 1MHZ 8SOIC |
|
MT25QU128ABA1EW7-MSITMicron Technology |
IC FLASH 128MBIT SPI 8WPDFN |
|
MT53E1536M32D4DT-046 AAT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
5962-3829413MZARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
S26KL256SDABHI020ARochester Electronics |
PARALLEL NOR FLASH, (32 MB) |
|
M30042040108X0PWARRenesas Electronics America |
IC RAM 4MBIT 108MHZ 8DFN |
|
5962-8981702YARochester Electronics |
UVPROM, 32KX8, 45NS, CMOS |
|
CG6897KGARochester Electronics |
SPECIAL |