类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 8Gb (256M x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | Surface Mount |
包/箱: | 200-WFBGA |
供应商设备包: | 200-WFBGA (10x14.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS25WP064A-JKLE-TRISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 64MBIT SPI/QUAD 8WSON |
|
CAT24C128LGIRochester Electronics |
IC EEPROM 128KBIT I2C 1MHZ 8DIP |
|
MB85AS8MTPF-G-KBERE1Fujitsu Electronics America, Inc. |
IC RAM 8MBIT SPI 10MHZ 8SOP |
|
SM662PXC-BDSTSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
DS2253T-612Rochester Electronics |
DS2253 |
|
MB85RS4MTYPF-G-BCERE1Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT SPI 50MHZ 8SOP |
|
MR2764A-25/BRochester Electronics |
8K X 8 |
|
MT48LC16M16A2B4-6A:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
MT28FW512ABA1LPC-0AATMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
R1RP0416DSB-2PR#D0Rochester Electronics |
4 M (256K X 16-BIT) SRAM |
|
CY7C12501KV 18-400BZXCRochester Electronics |
DDR SRAM, 1MX36, 0.45NS |
|
10422DCQRRochester Electronics |
10422 - 1K BIT ECL RAM |
|
CAT25128XERochester Electronics |
IC EEPROM 128KBIT SPI 8SOIC |