English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 128Kb (16K x 8) |
| 内存接口: | I²C |
| 时钟频率: | 1 MHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 400 ns |
| 电压 - 电源: | 1.8V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 8-DIP (0.300", 7.62mm) |
| 供应商设备包: | 8-PDIP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MB85AS8MTPF-G-KBERE1Fujitsu Electronics America, Inc. |
IC RAM 8MBIT SPI 10MHZ 8SOP |
|
|
SM662PXC-BDSTSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 3D TLC |
|
|
DS2253T-612Rochester Electronics |
DS2253 |
|
|
MB85RS4MTYPF-G-BCERE1Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT SPI 50MHZ 8SOP |
|
|
MR2764A-25/BRochester Electronics |
8K X 8 |
|
|
MT48LC16M16A2B4-6A:GMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
|
MT28FW512ABA1LPC-0AATMicron Technology |
IC FLASH 512MBIT PARALLEL 64LBGA |
|
|
R1RP0416DSB-2PR#D0Rochester Electronics |
4 M (256K X 16-BIT) SRAM |
|
|
CY7C12501KV 18-400BZXCRochester Electronics |
DDR SRAM, 1MX36, 0.45NS |
|
|
10422DCQRRochester Electronics |
10422 - 1K BIT ECL RAM |
|
|
CAT25128XERochester Electronics |
IC EEPROM 128KBIT SPI 8SOIC |
|
|
CY27C512-120ZCRochester Electronics |
OTP ROM, 64KX8, 120NS PDSO28 |
|
|
MT40A8G4CLU-062H:EMicron Technology |
IC FLASH 32GBIT PARALLEL 78FBGA |
