类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 84-BPGA |
供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
SMJ29F816FGMRochester Electronics |
FLASH, 2KX8, CQCC18 |
|
MT48LC16M16A2B4-7E IT:G TRMicron Technology |
IC DRAM 256MBIT PARALLEL 54VFBGA |
|
CG6135ATRochester Electronics |
SPECIAL |
|
70V34L15PFG8Renesas Electronics America |
IC SRAM 72KBIT PARALLEL 100TQFP |
|
SM662GEA-ACSSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
CY7C025AV-25ACRochester Electronics |
DUAL-PORT SRAM, 8KX16, 25NS |
|
93422AFM/BRochester Electronics |
256 X 4 TTL SRAM |
|
S29PL127J80BFI050Cypress Semiconductor |
IC FLASH 128MBIT PARALLEL 56FBGA |
|
CY7C199-10ZCRochester Electronics |
STANDARD SRAM, 32KX8, 10NS |
|
R1EX24512ASAS0I#S1Rochester Electronics |
EEPROM, 64KX8, SERIAL |
|
MX29F040CQC-70GMacronix |
IC FLASH 4MBIT PARALLEL 32PLCC |
|
S25FS064SAGNFI030ARochester Electronics |
SERIAL FLASH, 1.8V, 64MB |
|
MT53E768M32D4DT-046 AUT:EMicron Technology |
LPDDR4 24G 1.5GX16 FBGA QDP |