类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Asynchronous |
内存大小: | 512Kb (32K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 25ns |
访问时间: | 25 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Through Hole |
包/箱: | 108-BPGA |
供应商设备包: | 108-PGA (30.48x30.48) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M10042040054X0PSAYRenesas Electronics America |
IC RAM 4MBIT 54MHZ 8SOIC |
|
DS2502PU-1176+Rochester Electronics |
IEEE EUI-64 NODE ADDRESS CHIP |
|
CS6649AMRochester Electronics |
USB |
|
7025L35FBRenesas Electronics America |
IC SRAM 128KBIT PAR 84FLATPAK |
|
MT29F2G16ABAGAWP-AATES:G TRMicron Technology |
IC FLASH 2G PARALLEL 48TSOP |
|
7026L20JGI8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PLCC |
|
MSM5412222B-25TK-MTLROHM Semiconductor |
IC FRAM 3MBIT PARALLEL 44TSOP |
|
CAT93C46YI-G-ONRochester Electronics |
IC EEPROM 1KBIT SPI 2MHZ 8TSSOP |
|
FM93C66AEMT8XRochester Electronics |
EEPROM, 256X16, SERIAL, CMOS |
|
MX29F800CBXEI-70GMacronix |
IC FLASH 8MBIT PARALLEL |
|
IS25LP016D-JBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 16MBIT SPI/QUAD 8SOIC |
|
MT62F768M64D4EJ-031 WT:A TRMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |
|
27S21AJCRochester Electronics |
OTP ROM, 256X4, 60NS, TTL |