English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR4 |
| 内存大小: | 2Gb (128M x 16) |
| 内存接口: | - |
| 时钟频率: | 2.133 GHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | 1.1V |
| 工作温度: | -40°C ~ 95°C (TC) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
R1WV6416RSD-7SI#B0Rochester Electronics |
STANDARD SRAM, 4MX16, 70NS |
|
|
HN58C257AT85SRERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
|
|
71V25761S183PFIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
|
MT29F512G08EBHAFJ4-3R:AMicron Technology |
IC FLSH 512GBIT PARALLEL 132VBGA |
|
|
HN58C256AFPI85ERochester Electronics |
256K EEPROM (32KWORD X 8-BIT) |
|
|
MT29F1T08EEHBFJ4-T:BMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
|
MT29F4G08ABBFAH4-IT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
S99-50312Rochester Electronics |
S99-50312 |
|
|
27LS00DCRochester Electronics |
STATIC RAM; 256 X 1 |
|
|
CY7C1350G-166AXCBRochester Electronics |
SYNC RAM |
|
|
CG6728AMRochester Electronics |
SPECIAL |
|
|
70P255L65BYGI8Renesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
|
MT53B256M64D2TG-062 XT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ |
