类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 8Kb (1K x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
S34ML04G104BHI010ZRochester Electronics |
4 GB, 3 V, SLC NAND FLASH |
|
SMJ68CE16L-35JDMRochester Electronics |
DUAL MARKED (5962-887400ILA) |
|
MT29F2T08GELBEJ4:B TRMicron Technology |
QLC 2T 256GX8 VBGA DDP |
|
71V546X5S133PFGIRochester Electronics |
IC SRAM 4.5MBIT PARALLEL 100TQFP |
|
5962-3829406MZARenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
CAT25C64LGIRochester Electronics |
IC EEPROM 64KBIT SPI 10MHZ 8DIP |
|
MD2764A-25/BRochester Electronics |
MD2764A-25/B |
|
7133SA90GBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
CAT24C64BWI-KT3JNRochester Electronics |
IC EEPROM 64KBIT I2C 1MHZ 8SOIC |
|
7005S20GRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PGA |
|
MB85R4M2TFN-G-JAE2Fujitsu Electronics America, Inc. |
IC FRAM 4MBIT 44TSOP |
|
70T633S10BCGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 256CABGA |
|
MT48LC16M16A2B4-6AAAT:GFlip Electronics |
IC DRAM 256MBIT PARALLEL 54VFBGA |