类型 | 描述 |
---|---|
系列: | Automotive, AEC-Q100 |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 1Gb (64M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.7V ~ 1.95V |
工作温度: | -40°C ~ 105°C (TA) |
安装类型: | Surface Mount |
包/箱: | 63-VFBGA |
供应商设备包: | 63-VFBGA (9x11) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG7601AARochester Electronics |
SEMICONDUCTOR OTHER |
|
AS4C256M16D4-83BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
MT29F4G16ABBDAH4-IT:D TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
5962-8687503XARenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
CG7695AARochester Electronics |
SPECIAL |
|
MT38Q40DEB10DBDXAU.Y64 TRMicron Technology |
IC MEM DDR MULTICHIP |
|
5962-8687504YARenesas Electronics America |
IC SRAM 8KBIT PARALLEL 48LCC |
|
S29CL016J1JQFM030Cypress Semiconductor |
IC FLASH 16MBIT PARALLEL 80PQFP |
|
CY62167DV20LL-5BVIRochester Electronics |
16-MBIT (1M X 16) MOBL SRAM |
|
MT28HL32GQBB6EBL-0GCTMicron Technology |
NOR FLASH 512MX64 PLASTIC 3.3V |
|
MB85RS2MLYPN-GS-AWEWE1Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8DFN |
|
LE25S40FDW00-AHSanyo Semiconductor/ON Semiconductor |
IC FLASH MEM 4MBIT SERIAL 8SOIC |
|
70V07L25JG8Renesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |