English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (32K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 3V ~ 3.6V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 68-BPGA |
| 供应商设备包: | 68-PGA (29.46x29.46) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F64G08CBCGBL04A3WC1-RMicron Technology |
IC FLASH 64GBIT PARALLEL DIE |
|
|
MT53E2G32D4DT-046 WT:A TRMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
CY7C266-25WCRochester Electronics |
UVPROM, 8KX8, 25NS, CMOS, CDIP28 |
|
|
FM25C160B-GA1Rochester Electronics |
FRAM SERIAL MEMORY 2KX8 |
|
|
MT29TZZZ5D6DKFRL-093 W.9A6 TRMicron Technology |
IC FLASH MEM 6G LPDDR2 MLC |
|
|
MT53E1G32D2NP-046 WT:A TRMicron Technology |
LPDDR4 32G 1GX32 FBGA DDP |
|
|
MD27C256-20/BRochester Electronics |
32 X 8 CMOS EPROM; PACKAGE WILL |
|
|
MT29AZ5A5CMGWD-18AAT.87C TRMicron Technology |
NANDMCP8GB |
|
|
M10042040054X0ISARRenesas Electronics America |
IC RAM 4MBIT SPI 54MHZ 8SOIC |
|
|
5962-8687506XARenesas Electronics America |
IC SRAM 8KBIT PARALLEL SB48 |
|
|
CG7630AARochester Electronics |
SEMICONDUCTOR OTHER |
|
|
CG7748AARochester Electronics |
SPECIAL |
|
|
CG7732AARochester Electronics |
SPECIAL |
