类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 128Kb (8K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 45ns |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Through Hole |
包/箱: | 84-BPGA |
供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
R1EX24032ATAS0A#U0Rochester Electronics |
EEPROM, 4KX8, SERIAL |
|
CG7805AARochester Electronics |
SPECIAL |
|
W9864G2JH-6Winbond Electronics Corporation |
IC DRAM 64MBIT PAR 86TSOP II |
|
HMI-65262-9Rochester Electronics |
16K X 1 ASYNCHRONOUS CMOS SRAM |
|
7052S35GBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 108PGA |
|
S98FL01GSDSBHBC13Cypress Semiconductor |
FLASH MEMORY NOR |
|
71256L70TDBRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
MTFC8GAMALHT-AATMicron Technology |
IC FLASH 64GBIT MMC |
|
MT29F64G08AECABH1-10Z:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
CG5147AMRochester Electronics |
SPECIAL |
|
S29PL032J70BFA073Cypress Semiconductor |
IC FLASH 32MBIT PARALLEL 56FBGA |
|
MT29F4G08ABBFAH4-AIT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
S72XS256RE0AHBJ13Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |