类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | PROM |
技术: | - |
内存大小: | 4Kb (1K x 4) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Surface Mount |
包/箱: | 18-CFlatpack |
供应商设备包: | 18-CFlatPack |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7006L35GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
|
R1EX24064ATA00A#S0Rochester Electronics |
EEPROM, 8KX8, SERIAL |
|
71V016SA20BFRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
MTFC4GACAAAM-4M ITFlip Electronics |
4GB, E MMC MEMORY |
|
MT53D512M64D4RQ-046 WT:EMicron Technology |
IC DRAM 32GBIT 2133MHZ 556WFBGA |
|
MT53E2G32D8QD-053 WT:EMicron Technology |
LPDDR4 64G 2GX32 FBGA WT 8DP |
|
M5M5V208AKV-70HISTRochester Electronics |
128K X16, SRAM |
|
CY7C1347G-250AXCKJRochester Electronics |
SYNC RAM |
|
HM4-6642-9Rochester Electronics |
512 X 8 CMOS PROM |
|
7143LA35GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
HM2V8100TTI5SPEZRochester Electronics |
MEMORY SRAM 8M |
|
EM68B08CWAH-25HEtron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
S70FL01GSAGBHVC10Cypress Semiconductor |
IC FLASH 1GBIT SPI/QUAD 24BGA |