类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | PROM |
技术: | - |
内存大小: | 8Kb (1K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 45 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TC) |
安装类型: | Surface Mount |
包/箱: | 32-CLCC |
供应商设备包: | 32-CLCC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CY62128ELL-55SXEKJRochester Electronics |
ASYNC RAM |
|
MT29F64G08CBCGBL04A3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL DIE |
|
S72XS256RE0AHBHH0Cypress Semiconductor |
IC FLASH RAM 256MBIT PAR 133FBGA |
|
CG7393AMRochester Electronics |
SPECIAL |
|
SMJ64C16S-25JDMRochester Electronics |
STANDARD SRAM, 16KX1 |
|
7164S35TDBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 28CDIP |
|
7133SA35GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
CY7C1361C-100AXEKJRochester Electronics |
CACHE SRAM, 256KX36, 6.5NS |
|
M10162040054X0ISAYRenesas Electronics America |
IC RAM 16MBIT 54MHZ 8SOIC |
|
MT29F256G08CBHBBJ4-3R:B TRMicron Technology |
IC FLASH 256GBIT PARALLEL 333MHZ |
|
71V016SA10BF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
IS43TR16512BL-107MBLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 8GBIT PARALLEL 96TWBGA |
|
R1EX25512ATA00A#S0Rochester Electronics |
EEPROM, 64KX8, SERIAL |