类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 64Gb (2G x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG7465AFRochester Electronics |
SPECIAL |
|
MT29F16G08ABACAM72A3WC1PMicron Technology |
IC FLASH 16GBIT PARALLEL WAFER |
|
CG7442AFRochester Electronics |
SPECIAL |
|
PAL22V10A/B3ARochester Electronics |
ELECTRICALLY ERASABLE PAL DEVIC |
|
R1LP0408CSP-7UI#B0Rochester Electronics |
STANDARD SRAM, 512KX8, 70NS |
|
MT29F2G01ABAGDWB-IT:GMicron Technology |
IC FLASH 2GBIT SPI 8UPDFN |
|
27S47SADM/BRochester Electronics |
27S47SADM/B |
|
MT25QU128ABB1ESE-0AUT TRMicron Technology |
IC FLASH 128MBIT SPI 166MHZ 8SO |
|
MT29F64G08AECABH1-10ITZ:AMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
M29F200FT5AN6E2Flip Electronics |
IC FLASH 2MBIT PARALLEL 48TSOP |
|
EM6A9160TSC-4IGEtron Technology |
IC DRAM 128MBIT PAR 66TSOP II |
|
5962-8866204XARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
5962-8866201NARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |