类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | NVSRAM |
技术: | NVSRAM (Non-Volatile SRAM) |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 34-LPM |
供应商设备包: | 34-LPM |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
71256L45TDBRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
![]() |
70T633S12BFGIRenesas Electronics America |
IC SRAM 9MBIT PARALLEL 208CABGA |
![]() |
5962-9150802MXARenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PGA |
![]() |
MT53E2G32D4DT-046 WT:AMicron Technology |
IC DRAM LPDDR4 FBGA |
![]() |
SM661PE8-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 ML |
![]() |
54S288AJ/BRochester Electronics |
32X8 PROM |
![]() |
27S41ADM/BRochester Electronics |
27S41ADM/B |
![]() |
CG7757AARochester Electronics |
SPECIAL |
![]() |
M5M5256DFP-70G#BMRochester Electronics |
STANDARD SRAM, 32KX8 |
![]() |
MT53E512M64D4NW-053 WT:EMicron Technology |
LPDDR4 32G 512MX64 FBGA WT QDP |
![]() |
CY100E422-5KCQRochester Electronics |
STANDARD SRAM, 256X4, ECL100K |
![]() |
EM6GD08EWUF-10HEtron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
![]() |
MT53D512M64D4RQ-046 WT:E TRMicron Technology |
IC DRAM 32GBIT 2133MHZ 556WFBGA |