English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | NoBL™ |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Synchronous, SDR |
| 内存大小: | 18Mb (1M x 18) |
| 内存接口: | Parallel |
| 时钟频率: | 167 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 3.4 ns |
| 电压 - 电源: | 2.375V ~ 2.625V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
27C16Q45/BRochester Electronics |
27C16Q45/B |
|
|
CAT24C256ZD2GIRochester Electronics |
IC EEPROM 256KBIT I2C 1MHZ 8TDFN |
|
|
CY14B116N-BA25XIRochester Electronics |
IC NVSRAM 16MBIT PARALLEL 60FBGA |
|
|
CAT93C66YIRochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8TSSOP |
|
|
MT41J128M16JT-107G:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
|
M5M5W817KT-70HI#BTRochester Electronics |
512K X16, SRAM |
|
|
M10082040108X0PSARRenesas Electronics America |
IC RAM 8MBIT 108MHZ 8SOIC |
|
|
5962-8976407MYARenesas Electronics America |
IC SRAM 32KBIT PARALLEL 48LCC |
|
|
SM667PE2-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 4.5 SL |
|
|
0000009K2871Rochester Electronics |
CMOS6X1 CHINOO 4M SRAM PBG |
|
|
5962-9089909MUARochester Electronics |
FLASH, 128KX8, 90NS, CDFP32 |
|
|
SM668PEA-ACSilicon Motion |
FERRI-EMMC BGA 153-B EMMC 5.0 SL |
|
|
5962-8866205NARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
