English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 256Kb (16K x 16) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 35ns |
| 访问时间: | 35 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 84-BPGA |
| 供应商设备包: | 84-PGA (27.94x27.94) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
27S47AFM/BRochester Electronics |
27S47AFM/B |
|
|
SM662GXB-ACSSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
|
7143LA55GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
|
RM24C128BF-0-GCSI-TAdesto Technologies |
128KB 4-CSP I2C 1.65V BYTE0 |
|
|
70914S12PFGRenesas Electronics America |
IC SRAM 36KBIT PARALLEL 80TQFP |
|
|
MT53E2D1AFW-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MT40A1G8SA-062E:J TRMicron Technology |
IC DRAM 8GBIT PARALLEL 78FBGA |
|
|
MT29F4G08ABAFAH4-AAT:F TRMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
AS4C32M16SB-7BINTRAlliance Memory, Inc. |
IC DRAM 512MBIT PAR 54TSOP II |
|
|
7132LA25L48BRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 48LCC |
|
|
MT46V32M8P-5B:MFlip Electronics |
IC DRAM 256MBIT PARALLEL 66TSOP |
|
|
GVT71256B18T-8Rochester Electronics |
SRAM 3.3V 4.5M-BIT 256K X 18 8NS |
|
|
CY7C1041BN-20ZSXAKJRochester Electronics |
ASYNC RAM |
