类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 32Kb (4K x 8) |
内存接口: | I²C |
时钟频率: | 1 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | 400 ns |
电压 - 电源: | 1.7V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CAT93C66VGI-1.8-T3Rochester Electronics |
IC EEPROM 4KBIT SPI 2MHZ 8SOIC |
|
MTFC16GAKAEEF-AAT TRMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
CY7C1362C-166AJXCKJRochester Electronics |
CACHE SRAM, 512KX18, 3.5NS |
|
ER2055Rochester Electronics |
512 BIT ELECTRICALLY ALTERABLE R |
|
CG5685ATRochester Electronics |
SPECIAL |
|
MT29F4G01ABAFDWB-IT:F TRMicron Technology |
IC FLASH 4GBIT SPI 8UPDFN |
|
CP7350ATRochester Electronics |
USB |
|
CY62146DV30LL-70ZSIRochester Electronics |
ASYNC RAM |
|
CY62157EV30LL-55SXERochester Electronics |
STANDARD SRAM, 512KX16, 45NS |
|
GS832136AGB-333IGSI Technology |
1M X 36 (36 MEG) SYNCH BURST REV |
|
MT25QU128ABB8E12-0AUTMicron Technology |
IC FLASH 128MBIT SPI 24TPBGA |
|
CAT25AM02C8CTRRochester Electronics |
IC EEPROM 2MBIT SPI 5MHZ 8WLCSP |
|
MX25R4035FBDIH1Macronix |
IC FLASH 4MBIT SPI/QUAD 8WLCSP |