类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 128Kb (16K x 8) |
内存接口: | I²C |
时钟频率: | 100 kHz |
写周期时间 - 字,页: | 6ms |
访问时间: | 3.5 µs |
电压 - 电源: | 2.5V ~ 5.5V |
工作温度: | -40°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.209", 5.30mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT25QL256ABA8E12-0AAT TRMicron Technology |
IC FLASH 256MBIT SPI 24TPBGA |
|
AT25080AN-SQ27DBRochester Electronics |
AT25080 - EEPROM, 1KX8, SERIAL |
|
06K4626Rochester Electronics |
8MB SRAM CMOS6X CMOS6X1 CHINOOK |
|
7052L30GBRenesas Electronics America |
IC SRAM 16KBIT PARALLEL 108PGA |
|
MT29F1T08EEHBFJ4-R:BMicron Technology |
IC FLASH 1TB PARALLEL 132VBGA |
|
M30162040054X0ISAYRenesas Electronics America |
IC RAM 16MBIT 54MHZ 8SOIC |
|
ATXP064B-UUE-TAdesto Technologies |
IC FLSH 64MBIT SPI/OCTAL 46WLCSP |
|
MT29F256G08AUCABH3-10Z:AMicron Technology |
IC FLASH 256GBIT PAR 100LBGA |
|
JM38510/29103BYARochester Electronics |
16KX1 STATIC RAM, 85NS ACCESS TI |
|
MT53E2G32D4NQ-046 WT:A TRMicron Technology |
LPDDR4 64G 2GX32 FBGA QDP |
|
7025S20GRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PGA |
|
M30082040054X0PWAYRenesas Electronics America |
IC RAM 8MBIT 54MHZ 8DFN |
|
CAT25040VI-GT3ARochester Electronics |
IC EEPROM 4KBIT SPI 20MHZ 8SOIC |