类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 2Kb (256 x 8) |
内存接口: | SPI |
时钟频率: | 20 MHz |
写周期时间 - 字,页: | 5ms |
访问时间: | - |
电压 - 电源: | 1.8V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 8-SOIC (0.154", 3.90mm Width) |
供应商设备包: | 8-SOIC |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
GD25LQ16C8IGRGigaDevice |
IC FLASH 16MBIT SPI/QUAD 8LGA |
|
DS2704RQ-C0B+TRRochester Electronics |
1280 BIT EEPROM WITH SHA-1 AUTHE |
|
CY7C199CN-12VXAKJTRochester Electronics |
DUAL PORT RAM |
|
MT28EW128ABA1HPN-0SIT TRMicron Technology |
IC FLSH 128MBIT PARALLEL 56VFBGA |
|
EM6GE08EW8D-10HEtron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT29RZ4C4DZZMGGM-18W.80C TRMicron Technology |
IC FLASH RAM 4G PARALLEL 533MHZ |
|
CAT24C04C5ATRSanyo Semiconductor/ON Semiconductor |
IC EEPROM 4KBIT I2C 5WLCSP |
|
MTFC16GAKAEEF-O1 AIT TRMicron Technology |
IC FLASH 128GBIT MMC 169TFBGA |
|
70V26L55GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
|
MT42L64M32D2HE-18 IT:D TRMicron Technology |
IC DRAM 2GBIT PARALLEL 134VFBGA |
|
8403615JARenesas Electronics America |
IC SRAM 16KBIT PARALLEL 24CDIP |
|
CP7215AARochester Electronics |
USB |
|
DS1250Y-EMCRochester Electronics |
DS1250 512K X 8 NV SRAM MODULE |