类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Dual Port, Synchronous |
内存大小: | 16Kb (2K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -55°C ~ 125°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-LCC |
供应商设备包: | 48-LCC (14.22x14.22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53E128M32D2DS-053 IT:A TRMicron Technology |
LPDDR4 4G 128MX32 WFBGA |
|
MT29C4G48MAYBBAKS-48 IT TRMicron Technology |
IC FLASH LPDRAM 137VFBGA |
|
5962-8700210ZARenesas Electronics America |
IC SRAM 16KBIT PARALLEL SB48 |
|
MT25QL01GBBB8ESFE01-2SITMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SOP2 |
|
MT29VZZZBD9DQKPR-046 W.9M9Micron Technology |
IC FLASH MEM 16.75G X64 MCP |
|
27C256-25/SO277Rochester Electronics |
256K (32K X 8) CMOS EPROM |
|
70V9269S12PRFGIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 128TQFP |
|
AT45DB021E-UUN2B-TAdesto Technologies |
IC FLASH 2MBIT SPI 70MHZ 8WLCSP |
|
CY7C1355C-133AXCKGRochester Electronics |
ZBT SRAM, 256KX36, 6.5NS, CMOS |
|
7133LA35FBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68FPACK |
|
CS6681BMRochester Electronics |
USB |
|
MT53B256M64D2NL-062 XT:CMicron Technology |
IC DRAM 16GBIT 1600MHZ FBGA |
|
NM93C46ALZMT8Rochester Electronics |
EEPROM, 64X16, SERIAL, CMOS |