类型 | 描述 |
---|---|
系列: | PL-J |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NOR |
内存大小: | 32Mb (2M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 55ns |
访问时间: | 55 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-VFBGA |
供应商设备包: | 56-FBGA (9x7) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
EM63A165TS-5GEtron Technology |
IC DRAM 256MBIT PAR 54TSOP II |
|
SM662GE8-ACSilicon Motion |
FERRI-EMMC BGA 100-B EMMC 5.0 ML |
|
M45PE16-VMW6TGAlliance Memory, Inc. |
IC FLASH 16MBIT SPI 75MHZ 8SO |
|
MT40A8G4VNE-062H:BMicron Technology |
IC FLASH 32GBIT 1.6GHZ |
|
ER2051/PRochester Electronics |
512 BIT ELECTRICALLY ALTERABLE R |
|
CG7031DSRochester Electronics |
SPECIAL |
|
7MBV4153S50CBRochester Electronics |
7MBV4153S - SRAM MODULE |
|
7133SA55FBRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68FPACK |
|
7133SA20GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
70V3579S6BCI8Renesas Electronics America |
IC SRAM 1.125MBIT PAR 256CABGA |
|
CAT25256YI-GT3CRochester Electronics |
IC EEPROM 256KBIT SPI 8TSSOP |
|
CY7C1370SV25-200CKJRochester Electronics |
SYNC RAM |
|
MT62F768M64D4EJ-031 AUT:A TRMicron Technology |
LPDDR5 48G 768MX64 FBGA QDP |