English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Quad Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 25ns |
| 访问时间: | 25 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | 0°C ~ 70°C (TA) |
| 安装类型: | Through Hole |
| 包/箱: | 108-BPGA |
| 供应商设备包: | 108-PGA (30.48x30.48) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
CAT24C32ZD2GI-T2Rochester Electronics |
IC EEPROM 32KBIT I2C 1MHZ 8TDFN |
|
|
CG6078AATRochester Electronics |
SPECIAL |
|
|
S25FL128SAGBHEA03Cypress Semiconductor |
IC FLASH 128MBIT SPI/QUAD 24BGA |
|
|
MT53E128M16D1DS-053 AAT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
CG8773AFTCypress Semiconductor |
IC MEM F-RAM SERIAL 8SOP |
|
|
MT29RZ4C8DZZMHAN-18W.80DMicron Technology |
IC FLASH RAM 4G PARALLEL 533MHZ |
|
|
MT29F1G08ABAFAH4-AATES:FMicron Technology |
IC FLASH 1GBIT PARALLEL 63VFBGA |
|
|
MD51C68-35/BRochester Electronics |
DUAL MARKED (5962-8670512RA) |
|
|
5962-8866206XARenesas Electronics America |
IC SRAM 256KBIT PARALLEL 28CDIP |
|
|
IS25LP032D-JBLA3ISSI (Integrated Silicon Solution, Inc.) |
IC FLASH 32MBIT SPI/QUAD 8SOIC |
|
|
CAT2508OVP21GTQHRochester Electronics |
IC EEPROM 8KBIT SPI 10MHZ 8TDFN |
|
|
MB85RS2MTYPN-GS-AWEWE1Fujitsu Electronics America, Inc. |
IC FRAM 2MBIT SPI 50MHZ 8DFN |
|
|
M10162040108X0ISAYRenesas Electronics America |
IC RAM 16MBIT 108MHZ 8SOIC |
