类型 | 描述 |
---|---|
系列: | - |
包裹: | Bulk |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (TLC) |
内存大小: | 2Tb (256G x 8) |
内存接口: | Parallel |
时钟频率: | 333 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.5V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
S25FL512SAGBHBB13Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
![]() |
7026L25GRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 84PGA |
![]() |
CY7C146-35JCTRochester Electronics |
DUAL-PORT SRAM, 2KX8, 35NS |
![]() |
AT93C56A-SQ27U5Rochester Electronics |
AT93C56 - EEPROM, 128X16, SERIAL |
![]() |
HM2V8100TTI5SSPERochester Electronics |
MEMORY SRAM 8M |
![]() |
CG7576AARochester Electronics |
SPECIAL |
![]() |
7005S35GBRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PGA |
![]() |
CG7526AMRochester Electronics |
CG7526AM |
![]() |
S25FL512SAGBHBB10Cypress Semiconductor |
IC FLASH 512MBIT SPI/QUAD 24BGA |
![]() |
IS61WV51216EEBLL-10B2LIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 8MBIT PARALLEL 48TFBGA |
![]() |
MT58L64L32PT-6 TRRochester Electronics |
SRAM SYNC QUAD 2M-BIT 64KX32 |
![]() |
MMT58L128L36P1T-10Rochester Electronics |
4MB SYNCBURST SRAM, 3.3V 128KX36 |
![]() |
MT53E1DBDS-DCMicron Technology |
LPDDR4 0 WFBGA |