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| 类型 | 描述 |
|---|---|
| 系列: | * |
| 包裹: | Bulk |
| 零件状态: | Active |
| 内存类型: | - |
| 内存格式: | - |
| 技术: | - |
| 内存大小: | - |
| 内存接口: | - |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | - |
| 安装类型: | - |
| 包/箱: | - |
| 供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
27C512-55DM/BRochester Electronics |
512K (64K X 8) CMOS EPROM |
|
|
MT29F256G08EBHBFJ4-3ITFES:BMicron Technology |
IC FLASH 256G PARALLEL 132VBGA |
|
|
CAT24C128WGERochester Electronics |
IC EEPROM 128KBIT I2C 1MHZ 8SOIC |
|
|
E28F008S3150Rochester Electronics |
3 VOLT FLASHFILE MEMORY |
|
|
CG7099AMRochester Electronics |
SPECIAL |
|
|
MT41K256M8DA-125 AAT:K TRMicron Technology |
IC DRAM 2GBIT PARALLEL 78FBGA |
|
|
CY7C1472V33-200AXCKJRochester Electronics |
SYNC RAM |
|
|
MT28EW512ABA1LPN-0SIT TRMicron Technology |
IC FLSH 512MBIT PARALLEL 56VFBGA |
|
|
MD27C64-20/BRochester Electronics |
64K (8K X 8) EPROM |
|
|
MT61K256M32JE-14:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 180FBGA |
|
|
CG7137AATRochester Electronics |
SPECIAL |
|
|
N93C66BT3ETAGSanyo Semiconductor/ON Semiconductor |
4KB MICROWIRE SER EEPROM |
|
|
IS61LF51218B-7.5TQLI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 9MBIT PARALLEL 100LQFP |
