English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Active |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Synchronous |
| 内存大小: | 8Kb (1K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -55°C ~ 125°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 48-LCC |
| 供应商设备包: | 48-LCC (14.22x14.22) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MX29SL800CTXBI-90GMacronix |
IC FLASH 8MBIT PARALLEL 48TFBGA |
|
|
HN58X24512FPIAG#S0Rochester Electronics |
512K EEPROM (64K X 8 BIT) SERIAL |
|
|
EDB8164B4PT-1DIT-F-DMicron Technology |
IC DRAM 8GBIT PARALLEL 216FBGA |
|
|
AS7C31026C-12BINAlliance Memory, Inc. |
IC SRAM 1MBIT PARALLEL 48BGA |
|
|
7133LA55GRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PGA |
|
|
MT52L512M64D4PQ-107 WT:BMicron Technology |
IC DRAM 32GBIT 933MHZ 253VFBGA |
|
|
MT53E2G32D4DT-046 AAT:AMicron Technology |
IC DRAM LPDDR4 FBGA |
|
|
ER2051I/PRochester Electronics |
512 BIT ELECTRICALLY ALTERABLE R |
|
|
MT29F4G01ABAFD12-IT:F TRMicron Technology |
IC FLASH 4GBIT SPI 24TPBGA |
|
|
MX25V1006EOI-13GMacronix |
IC FLSH 1MBIT SPI/DUAL I/O 75MHZ |
|
|
MT53E128M16D1DS-046 WT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
M5M5256DFP-70GI#SMRochester Electronics |
STANDARD SRAM, 32KX8 |
|
|
MD8039AHL/RRochester Electronics |
MD8039AHL/R |
