English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | e•MMC™ |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NAND |
| 内存大小: | 256Gb (32G x 8) |
| 内存接口: | MMC |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | - |
| 电压 - 电源: | - |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 100-TBGA |
| 供应商设备包: | 100-TBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT53D768M64D8WF-053 WT:DMicron Technology |
IC DRAM 48GBIT 1866MHZ 376WFBGA |
|
|
MT53D512M64D4NW-062 WT ES:DMicron Technology |
IC DRAM 32GBIT 1600MHZ 432VFBGA |
|
|
QMP29GL064A90TFIR90HCypress Semiconductor |
IC MEMORY NOR |
|
|
MT29C2G24MAAAAKAKD-5 IT TRMicron Technology |
IC FLASH RAM 2GBIT PAR 137TFBGA |
|
|
MT51J256M32HF-60:A TRMicron Technology |
IC RAM 8GBIT PARALLEL 170FBGA |
|
|
MT53E128M16D1DS-046 AIT:A TRMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
IS62WV25616EALL-55BI-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 48VFBGA |
|
|
CG8117AATCypress Semiconductor |
IC CLOCK PROGRAMMABLE |
|
|
IS61NLF25672-6.5B1ISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
|
MTFC128GAJAECE-AAT TRMicron Technology |
IC FLASH 1TB MMC 169LFBGA |
|
|
MT29F4G08ABBDAHC-IT:DMicron Technology |
IC FLASH 4GBIT PARALLEL 63VFBGA |
|
|
CG8536AATCypress Semiconductor |
IC PSOC3 |
|
|
CG8662AATCypress Semiconductor |
IC USB PERIPHERAL SUPER SPEED |
