English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tube |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | EPROM |
| 技术: | EPROM - OTP |
| 内存大小: | 1Mb (128K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | - |
| 访问时间: | 120 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 32-LCC (J-Lead) |
| 供应商设备包: | 32-PLCC (11.35x13.89) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT29F3T08EQHBBG2-3R:B TRMicron Technology |
IC FLASH 3TB PARALLEL 272TBGA |
|
|
MT42L32M16D1AB-3 WT:A TRMicron Technology |
IC DRAM 512MBIT PARALLEL 121FBGA |
|
|
MT29C2G24MAABAKAML-5 E ITMicron Technology |
IC FLASH RAM 2GBIT PAR 153VFBGA |
|
|
W25Q128FWCIGWinbond Electronics Corporation |
IC FLASH 128MBIT SPI 8SOP |
|
|
EDF8164A3MA-JD-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 253FBGA |
|
|
EDF8164A3MD-GD-F-D TRMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
|
|
IS61NVP25672-200B1-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
|
7006L35JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
28576411 ACypress Semiconductor |
IC MEMORY NOR 24FBGA |
|
|
51-30259Z02-ACypress Semiconductor |
IC FLASH NOR |
|
|
MT49H16M18FM-25 TRMicron Technology |
IC DRAM 288MBIT PARALLEL 144UBGA |
|
|
MT25TL01GHBB8ESF-0AATMicron Technology |
IC FLASH 1GBIT SPI 133MHZ 16SOP2 |
|
|
MT53B512M64D8HR-053 WT ES:B TRMicron Technology |
IC DRAM 32GBIT 1866MHZ FBGA |
