类型 | 描述 |
---|---|
系列: | - |
包裹: | Tube |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | EPROM |
技术: | EPROM - OTP |
内存大小: | 1Mb (128K x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | 120 ns |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | 32-LCC (J-Lead) |
供应商设备包: | 32-PLCC (11.35x13.89) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53B512M64D4NK-053 WT ES:C TRMicron Technology |
IC DRAM 32GBIT 1866MHZ 366WFBGA |
|
MT41J128M16JT-093:KMicron Technology |
IC DRAM 2GBIT PARALLEL 96FBGA |
|
MT25QU256ABA1EW7-0SITMicron Technology |
IC FLASH 256MBIT SPI 8WPDFN |
|
MT53D2048M32D8QD-062 WT ES:D TRMicron Technology |
IC DRAM 64GBIT 1600MHZ FBGA |
|
MT29F256G08EBHAFB16A3WTAMicron Technology |
TLC 256G DIE 32GX8 |
|
MT53D512M32D2NP-046 WT:EMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
MT46H128M32L2MC-6 IT:AMicron Technology |
IC DRAM 4GBIT PARALLEL 240WFBGA |
|
DS28E05GB+UMaxim Integrated |
IC EEPROM 896B 1-WIRE 2SFN |
|
AT49BV1604AT-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 45CBGA |
|
MT46H64M32LFCX-5 IT:B TRMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
CG8157AACypress Semiconductor |
MICROPOWER SRAMS |
|
AS4C512M8D3B-12BINAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
W25Q32FWBYIC TRWinbond Electronics Corporation |
IC FLASH 32MBIT SPI/QUAD 12WLCSP |