类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 128Gb (16G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -25°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
IS62WV5128EALL-55HLIISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 4MBIT PARALLEL 32TSOP I |
|
CG8230AACypress Semiconductor |
IC SRAM MICROPOWER |
|
M36W0R6050T4ZAQF TRMicron Technology |
IC FLASH PSRAM 96M |
|
7025S55PFIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |
|
7133SA70JIRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
70V35S20PFIRenesas Electronics America |
IC SRAM 144K PARALLEL 100TQFP |
|
MT53B384M64D4NK-062 XT:BMicron Technology |
IC DRAM 24GBIT 1600MHZ 366WFBGA |
|
W972GG8JB-25 TRWinbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 60WBGA |
|
IS43LR32320B-5BL-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 90LFBGA |
|
93AA76C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 8KBIT SPI 3MHZ DIE |
|
70V28VL20PF8Renesas Electronics America |
IC SRAM 1MBIT PARALLEL 100TQFP |
|
70P259L65BYGIRenesas Electronics America |
IC SRAM 128KBIT PAR 100CABGA |
|
MT29F64G08CBEFBL94C3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL WAFER |