FUSE BRD MNT 1.25A 125VAC RADIAL
IC SRAM 4MBIT PARALLEL 48MINIBGA
类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | SRAM |
技术: | SRAM - Asynchronous |
内存大小: | 4Mb (256K x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 70ns |
访问时间: | 70 ns |
电压 - 电源: | 1.65V ~ 2.2V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 48-TFBGA |
供应商设备包: | 48-miniBGA (6x8) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG7761AACypress Semiconductor |
MICROPOWER SRAMS |
|
DS28E02P-W10+2TMaxim Integrated |
IC EEPROM 1KBIT 1-WIRE 6TSOC |
|
MT29F128G08AJAAAWP-Z:A TRMicron Technology |
IC FLASH 128GBIT PARALLEL 48TSOP |
|
MT28GU01GAAA1EGC-0SITMicron Technology |
IC FLASH 1GBIT PARALLEL 64TBGA |
|
A2C00057906 ACypress Semiconductor |
IC FLASH NOR |
|
MT41J256M16HA-093:E TRMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
N25Q064A13EW74MEMicron Technology |
IC FLSH 64MBIT SPI 108MHZ 8WPDFN |
|
MSP14LV080-E1-GJ-001Cypress Semiconductor |
IC MCU AUTO |
|
MT53D1024M32D4NQ-046 AIT:DMicron Technology |
IC DRAM 32GBIT 2133MHZ 200VFBGA |
|
CB021-80075Cypress Semiconductor |
IC FLASH NOR |
|
CAS93C66VP2I-GT3Sanyo Semiconductor/ON Semiconductor |
4KB MICROWIRE SER EEPROM |
|
11AA020-I/W16KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT SINGLE WIRE DIE |
|
70V05S35JRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 68PLCC |