类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 4Tb (512G x 8) |
内存接口: | Parallel |
时钟频率: | 267 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
W632GU6AB-15Winbond Electronics Corporation |
IC DRAM 2GBIT PARALLEL 667MHZ |
|
MT44K32M36RB-107E IT:A TRMicron Technology |
IC RLDRAM 1.125GBIT PAR 168BGA |
|
MT53E4D1AEG-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
QMP29GL064A90TFIR90Cypress Semiconductor |
IC MEMORY NOR |
|
MT29C1G12MAAJVAKC-5 ITMicron Technology |
MCP 64MX16/32MX16 VFBGA |
|
PH28F320W18BE60AMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
CG7499AACypress Semiconductor |
IC SRAM NON VOLATILE 48FBGA |
|
MT29F512G08EMCBBJ5-10:B TRMicron Technology |
IC FLASH 512GBIT PARALLEL 100MHZ |
|
M27V160-100M1STMicroelectronics |
IC EPROM 16MBIT PARALLEL 44SO |
|
MT47H32M16HR-25E L:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 84FBGA |
|
S4012001270B0C010Cypress Semiconductor |
IC MEMORY NOR |
|
S29GL064S90DHI020Cypress Semiconductor |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
CG7855AACypress Semiconductor |
IC EMI REDUCTION PREMIS SSCG |