English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | Automotive, AEC-Q100 |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Non-Volatile |
| 内存格式: | FLASH |
| 技术: | FLASH - NOR |
| 内存大小: | 256Mb (32M x 8) |
| 内存接口: | SPI |
| 时钟频率: | 133 MHz |
| 写周期时间 - 字，页: | 8ms, 2.8ms |
| 访问时间: | - |
| 电压 - 电源: | 2.7V ~ 3.6V |
| 工作温度: | -40°C ~ 105°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 16-SOIC (0.295", 7.50mm Width) |
| 供应商设备包: | 16-SOP2 |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
DS1330BL-70Maxim Integrated |
IC NVSRAM 256KBIT PARALLEL 34LPM |
|
|
DS2704RQ-C0A+T&RMaxim Integrated |
IC EEPROM |
|
|
AT28C040-25BIRoving Networks / Microchip Technology |
IC EEPROM 4MBIT PARALLEL 32CDIP |
|
|
AT24CM01-UUM-TRoving Networks / Microchip Technology |
IC EEPROM 1MBIT I2C 1MHZ 8WLCSP |
|
|
M29W640GL7ANB6F TRMicron Technology |
IC FLASH 64MBIT PARALLEL 56TSOP |
|
|
IDT71T016SA15BFIRenesas Electronics America |
IC SRAM 1MBIT PARALLEL 48CABGA |
|
|
MT41K512M8V00HWC1-N001Micron Technology |
IC DRAM 4GBIT PARALLEL |
|
|
CG8170AACypress Semiconductor |
IC PSOC1 |
|
|
S29PL064J60BFID20ECypress Semiconductor |
IC FLASH NOR 48FBGA |
|
|
DS3645B+Maxim Integrated |
IC DEEPCOVER SEC MNGR 49CSBGA |
|
|
S70PL254J00BFWA20GCypress Semiconductor |
IC FLASH MEM NOR 84MCP |
|
|
EDFA164A2PK-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 216WFBGA |
|
|
M28W320HST70ZA6EMicron Technology |
IC FLASH 32MBIT PARALLEL 64TBGA |
