类型 | 描述 |
---|---|
系列: | - |
包裹: | Tape & Reel (TR) |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR3 |
内存大小: | 24Gb (192M x 128) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.14V ~ 1.95V |
工作温度: | -30°C ~ 105°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
AT49BV1614AT-90CIRoving Networks / Microchip Technology |
IC FLASH 16MBIT PARALLEL 48CBGA |
|
MT53D1536M32D6BE-046 WT:DMicron Technology |
IC DRAM 48G 2133MHZ FBGA |
|
IS46TR85120AL-125KBLA1-TRISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 4GBIT PARALLEL 78TWBGA |
|
70V9389L7PFRenesas Electronics America |
IC SRAM 1.125MBIT PAR 100TQFP |
|
7130LA55JG8/2930Renesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
CG8561AMCypress Semiconductor |
NON VOLATILE SRAMS |
|
MT40A1G16WBU-083E:BMicron Technology |
IC DRAM 16GBIT PARALLEL 96FBGA |
|
MT29F256G08CECABH6-6:AMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
MT46H64M32LFCX-5 AIT:BMicron Technology |
IC DRAM 2GBIT PARALLEL 90VFBGA |
|
M59DR032EA10ZB6STMicroelectronics |
IC FLASH 32MBIT PARALLEL 48TFBGA |
|
7024S20JIRenesas Electronics America |
IC SRAM 64KBIT PARALLEL 84PLCC |
|
7007S35JIRenesas Electronics America |
IC SRAM 256KBIT PARALLEL 68PLCC |
|
70V25L15PFI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 100TQFP |