类型 | 描述 |
---|---|
系列: | e•MMC™ |
包裹: | Tape & Reel (TR) |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND |
内存大小: | 256Gb (32G x 8) |
内存接口: | MMC |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | - |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 100-TBGA |
供应商设备包: | 100-TBGA (14x18) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT29F128G08CBEBBL85C3WC1-MMicron Technology |
IC FLASH 128GBIT PARALLEL |
|
NANDAAR4N4AZBA5EMicron Technology |
IC FLASH 2G SDR |
|
ECF620AAACN-C1-Y3Micron Technology |
LPDDR3 6G DIE 192MX32 |
|
MT29F256G08CECABH6-6R:AMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
7130SA55J8/CRenesas Electronics America |
IC SRAM 8KBIT PARALLEL 52PLCC |
|
28270509 ACypress Semiconductor |
IC GATE NOR |
|
24AA64SC-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 64KBIT I2C 400KHZ DIE |
|
MT47H128M8SH-25E AIT:MMicron Technology |
IC DRAM 1GBIT PARALLEL 60FBGA |
|
MT41K1G4THV-15E:MMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
MT29F8G01ADBFD12-AATES:FMicron Technology |
IC FLASH 8GBIT SPI 24TPBGA |
|
S99-50287Cypress Semiconductor |
IC GATE NOR |
|
MT29F3T08EUHBBM4-3R:B TRMicron Technology |
IC FLASH 3TB PARALLEL 333MHZ |
|
MT53D2G32D8QD-053 WT ES:EMicron Technology |
LPDDR4 64G 1GX64 FBGA 8DP |