类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH - NAND (MLC) |
内存大小: | 64Gb (8G x 8) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | 0°C ~ 70°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MT53D1024M64D8NW-053 WT ES:DMicron Technology |
IC DRAM 64GBIT 1866MHZ 432VFBGA |
|
M58LR256KT70ZQ5F TRMicron Technology |
IC FLASH 256MBIT PAR 88TFBGA |
|
MT38M4041A3034EZZI.XK6Micron Technology |
IC FLASH RAM 256MBIT PAR 56VFBGA |
|
AT49BV4096A-12RCRoving Networks / Microchip Technology |
IC FLASH 4MBIT PARALLEL 44SOIC |
|
MT53D384M64D4KA-046 XT ES:E TRMicron Technology |
IC DRAM 24GBIT 2133MHZ FBGA |
|
IS61NVF25672-6.5B1I-TRISSI (Integrated Silicon Solution, Inc.) |
IC SRAM 18MBIT PARALLEL 209LFBGA |
|
LE25FW056CS-TRM-ESanyo Semiconductor/ON Semiconductor |
IC EEPROM 512KBIT |
|
DS1345BL-70Maxim Integrated |
IC NVSRAM 1MBIT PARALLEL 34LPM |
|
M29W800FT70N3F TRMicron Technology |
IC FLASH 8MBIT PARALLEL 48TSOP |
|
7024S35PFI8Renesas Electronics America |
IC SRAM 64KBIT PARALLEL 100TQFP |
|
MT53D512M64D4RQ-053 WT ES:EMicron Technology |
IC DRAM 32GBIT 1866MHZ 556WFBGA |
|
NAND512R3A2SZA6EMicron Technology |
IC FLSH 512MBIT PARALLEL 63VFBGA |
|
MT48H16M32LFCM-6 L IT:B TRMicron Technology |
IC DRAM 512MBIT PARALLEL 90VFBGA |