类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 24Gb (384M x 64) |
内存接口: | - |
时钟频率: | 1.866 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
M29W640GT70ZS6EMicron Technology |
IC FLASH 64MBIT PARALLEL 64FBGA |
|
MT46H64M32L2JG-5 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 168VFBGA |
|
EDFA232A2PB-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
M29W320DB7AN6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
SST26VF016-80-5C-QAERoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
M58WR032KB70ZB6W TRMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
EDFA164A2PH-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
MT47H1G4WTR-25E:C TRMicron Technology |
IC DRAM 4GBIT PARALLEL 63FBGA |
|
8 611 200 851Cypress Semiconductor |
IC GATE NOR |
|
MT41K256M16TW-107 AT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
S30MS01GP25TFW000Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
CG8241AACypress Semiconductor |
IC SRAM |
|
EDFA364A3MA-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |