English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Discontinued at Digi-Key |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - Mobile LPDDR |
| 内存大小: | 2Gb (64M x 32) |
| 内存接口: | Parallel |
| 时钟频率: | 200 MHz |
| 写周期时间 - 字，页: | 15ns |
| 访问时间: | 5 ns |
| 电压 - 电源: | 1.7V ~ 1.95V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 168-VFBGA |
| 供应商设备包: | 168-VFBGA (12x12) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
EDFA232A2PB-JD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 216FBGA |
|
|
M29W320DB7AN6F TRMicron Technology |
IC FLASH 32MBIT PARALLEL 48TSOP |
|
|
SST26VF016-80-5C-QAERoving Networks / Microchip Technology |
IC FLASH 16MBIT SPI/QUAD 8WSON |
|
|
M58WR032KB70ZB6W TRMicron Technology |
IC FLASH 32MBIT PARALLEL 56VFBGA |
|
|
EDFA164A2PH-GD-F-R TRMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
|
MT47H1G4WTR-25E:C TRMicron Technology |
IC DRAM 4GBIT PARALLEL 63FBGA |
|
|
8 611 200 851Cypress Semiconductor |
IC GATE NOR |
|
|
MT41K256M16TW-107 AT:PMicron Technology |
IC DRAM 4GBIT PARALLEL 96FBGA |
|
|
S30MS01GP25TFW000Cypress Semiconductor |
IC FLASH MEMORY 48TSOP |
|
|
CG8241AACypress Semiconductor |
IC SRAM |
|
|
EDFA364A3MA-GD-F-DMicron Technology |
IC DRAM 16GBIT PARALLEL 800MHZ |
|
|
MT29F256G08CECABH6-6:A TRMicron Technology |
IC FLASH 256GBIT PAR 152VBGA |
|
|
28456781 ACypress Semiconductor |
IC GATE NOR |
