类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Non-Volatile |
内存格式: | FLASH |
技术: | FLASH |
内存大小: | 16Mb (2M x 8, 1M x 16) |
内存接口: | Parallel |
时钟频率: | - |
写周期时间 - 字,页: | 100ns |
访问时间: | 100 ns |
电压 - 电源: | 2.7V ~ 3.6V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | 56-SOP (0.524", 13.30mm Width) |
供应商设备包: | 56-SSOP |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
7015S12JRenesas Electronics America |
IC SRAM 72KBIT PARALLEL 68PLCC |
|
MT53E2G32D8QD-046 WT:EMicron Technology |
LPDDR4 64G 2GX32 FBGA WT 8DP |
|
MSM51V18165F-60J3-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
CG8157AATCypress Semiconductor |
MICROPOWER SRAMS |
|
24CS512-I/STRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
16-1004144-01-TCypress Semiconductor |
IC FLASH NOR |
|
MT53D8D1BSQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT49H64M9CBM-25E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT53B512M64D4EZ-062 WT:B TRMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
MT53E128M16D1DS-053 AIT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
S99GL064N90FFI030Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
MT53D768M64D8RG-053 WT ES:D TRMicron Technology |
IC DRAM 48GBIT 1866MHZ FBGA |
|
CP9105ATCypress Semiconductor |
IC MODULE SMD |