类型 | 描述 |
---|---|
系列: | - |
包裹: | Box |
零件状态: | Active |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - Mobile LPDDR4 |
内存大小: | 64Gb (2G x 32) |
内存接口: | - |
时钟频率: | 2.133 GHz |
写周期时间 - 字,页: | - |
访问时间: | - |
电压 - 电源: | 1.1V |
工作温度: | -30°C ~ 85°C (TC) |
安装类型: | - |
包/箱: | - |
供应商设备包: | - |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
MSM51V18165F-60J3-7ROHM Semiconductor |
IC DRAM 16MBIT PARALLEL 42SOJ |
|
CG8157AATCypress Semiconductor |
MICROPOWER SRAMS |
|
24CS512-I/STRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |
|
16-1004144-01-TCypress Semiconductor |
IC FLASH NOR |
|
MT53D8D1BSQ-DCMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
MT49H64M9CBM-25E:BMicron Technology |
IC DRAM 576MBIT PARALLEL 144UBGA |
|
MT53B512M64D4EZ-062 WT:B TRMicron Technology |
IC DRAM 32GBIT 1600MHZ FBGA |
|
MT53E128M16D1DS-053 AIT:AMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
S99GL064N90FFI030Cypress Semiconductor |
IC FLASH MEMORY NOR |
|
MT53D768M64D8RG-053 WT ES:D TRMicron Technology |
IC DRAM 48GBIT 1866MHZ FBGA |
|
CP9105ATCypress Semiconductor |
IC MODULE SMD |
|
CG8606AATCypress Semiconductor |
IC SRAM SYNC 100TQFP |
|
CG8259AACypress Semiconductor |
IC SRAM ASYNC |