类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Obsolete |
内存类型: | Volatile |
内存格式: | DRAM |
技术: | SDRAM - DDR3L |
内存大小: | 4Gb (256M x 16) |
内存接口: | Parallel |
时钟频率: | 800 MHz |
写周期时间 - 字,页: | - |
访问时间: | 13.75 ns |
电压 - 电源: | 1.283V ~ 1.45V |
工作温度: | 0°C ~ 95°C (TC) |
安装类型: | Surface Mount |
包/箱: | 96-TFBGA |
供应商设备包: | 96-FBGA (9x14) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
![]() |
MT35XU512ABA2G12-0AUTMicron Technology |
IC FLASH 512MBIT XCCELA 24TPBGA |
![]() |
MT29F8G01ADAFD12-AATES:F TRMicron Technology |
IC FLASH 8GBIT SPI 24TPBGA |
![]() |
MT53D768M64D4SQ-053 WT ES:A TRMicron Technology |
LPDDR4 48G 768MX64 FBGA QDP |
![]() |
CY7C106BN-1XW14Cypress Semiconductor |
IC SRAM ASYNC |
![]() |
CG8275AACypress Semiconductor |
IC MEMORY F-RAM PAR 28SOIC |
![]() |
CG7423AFCypress Semiconductor |
IC MICROPOWER SRAM 48TSOP I |
![]() |
EDF8164A3MD-GD-F-R TRMicron Technology |
IC DRAM 8GBIT PARALLEL 800MHZ |
![]() |
S99PL064J0040Cypress Semiconductor |
IC FLASH |
![]() |
70V27S15PFI8Renesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
![]() |
24AA02-I/WF16KRoving Networks / Microchip Technology |
IC EEPROM 2KBIT I2C 400KHZ DIE |
![]() |
W25Q64FVSCB1Winbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ |
![]() |
MT53B4DBDT-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
![]() |
MT41K512M8DA-125:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |