English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Active |
| 内存类型: | Non-Volatile |
| 内存格式: | EEPROM |
| 技术: | EEPROM |
| 内存大小: | 2Kb (256 x 8) |
| 内存接口: | I²C |
| 时钟频率: | 400 kHz |
| 写周期时间 - 字，页: | 5ms |
| 访问时间: | 900 ns |
| 电压 - 电源: | 1.7V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | Die |
| 供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
W25Q64FVSCB1Winbond Electronics Corporation |
IC FLASH 64MBIT SPI 104MHZ |
|
|
MT53B4DBDT-DC TRMicron Technology |
SPECIAL/CUSTOM LPDDR4 |
|
|
MT41K512M8DA-125:P TRMicron Technology |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
7016S35PFIRenesas Electronics America |
IC SRAM 144K PARALLEL 80TQFP |
|
|
S99-50297 PCypress Semiconductor |
IC NOR FLASH |
|
|
71V321SA25PF8Renesas Electronics America |
IC SRAM 16KBIT PARALLEL 64TQFP |
|
|
MT29F512G08CUCABH3-10R:AMicron Technology |
IC FLASH 512GBIT PAR 100LBGA |
|
|
MT42L128M64D2MC-3 WT:AMicron Technology |
IC DRAM 8GBIT PARALLEL 240FBGA |
|
|
CG8203AATCypress Semiconductor |
IC SRAM |
|
|
CG8364AMTCypress Semiconductor |
IC SRAM |
|
|
MT29F64G08AECABH1-10IT:A TRMicron Technology |
IC FLASH 64GBIT PARALLEL 100VBGA |
|
|
IS42S32400F-6BISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 128MBIT PARALLEL 90TFBGA |
|
|
7027S20PFIRenesas Electronics America |
IC SRAM 512KBIT PARALLEL 100TQFP |
