类型 | 描述 |
---|---|
系列: | - |
包裹: | Tray |
零件状态: | Active |
内存类型: | Non-Volatile |
内存格式: | EEPROM |
技术: | EEPROM |
内存大小: | 1Kb (64 x 16) |
内存接口: | SPI |
时钟频率: | 2 MHz |
写周期时间 - 字,页: | 2ms |
访问时间: | - |
电压 - 电源: | 4.5V ~ 5.5V |
工作温度: | -40°C ~ 85°C (TA) |
安装类型: | Surface Mount |
包/箱: | Die |
供应商设备包: | Die |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间:周一至周五,9:00-18:30(GMT+8)
电话: 00852-52612101
CG8102AATCypress Semiconductor |
IC SRAM 100TQFP |
|
7006S17JIRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
CG8442AATCypress Semiconductor |
SYNC SRAMS |
|
CG8018AATCypress Semiconductor |
IC SRAM NONVOLATILE |
|
MT29F64G08AKABAC5:BMicron Technology |
IC FLASH 64GBIT PARALLEL 52VLGA |
|
7133LA90JRenesas Electronics America |
IC SRAM 32KBIT PARALLEL 68PLCC |
|
AT25256-10UI-1.8Roving Networks / Microchip Technology |
IC EEPROM 256KBIT SPI 8DBGA |
|
MX63U2GC1GCAXMI01Macronix |
IC FLASH RAM 2GBIT PAR 533MHZ |
|
MTFC8GACAAAM-1M WT TRMicron Technology |
IC FLASH 32GBIT 153VFBGA |
|
MT29F64G08CBAAAL74A3WC1Micron Technology |
IC FLASH 64GBIT PARALLEL DIE |
|
MT29C2G24MAABAHAKC-5 ITMicron Technology |
IC FLASH RAM 2GBIT PAR 107TFBGA |
|
25AA1024-I/S16KRoving Networks / Microchip Technology |
IC EEPROM 1MBIT SPI 20MHZ DIE |
|
24CS512T-I/OTRoving Networks / Microchip Technology |
512K 3.4MHZ I2C SERIAL EEPROM |