English
简体中文
RES 135K OHM 1/8W .1% AXIAL
IC DRAM 4GBIT PARALLEL 78FBGA
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tray |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | DRAM |
| 技术: | SDRAM - DDR3 |
| 内存大小: | 4Gb (512M x 8) |
| 内存接口: | Parallel |
| 时钟频率: | 533 MHz |
| 写周期时间 - 字，页: | - |
| 访问时间: | 13.125 ns |
| 电压 - 电源: | 1.425V ~ 1.575V |
| 工作温度: | 0°C ~ 95°C (TC) |
| 安装类型: | Surface Mount |
| 包/箱: | 78-TFBGA |
| 供应商设备包: | 78-FBGA (9x11.5) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
|
MT42L64M32D1LF-18 IT:CMicron Technology |
IC DRAM 2GBIT PARALLEL 168FBGA |
|
|
CG7925AMTCypress Semiconductor |
IC SRAM MICROPOWER |
|
|
93C86C/WF15KRoving Networks / Microchip Technology |
IC EEPROM 16KBIT SPI 3MHZ DIE |
|
|
MT53D768M64D8JS-053 WT:D TRMicron Technology |
IC DRAM 48GBIT 1866MHZ 366VFBGA |
|
|
MT47H64M8CF-25E L:G TRMicron Technology |
IC DRAM 512MBIT PARALLEL 60FBGA |
|
|
MT41J64M16JT-125:G TRMicron Technology |
IC DRAM 1GBIT PARALLEL 96FBGA |
|
|
MT42L64M32D1KL-25 IT:AMicron Technology |
IC DRAM 2GBIT PARALLEL 168FBGA |
|
|
EDFP164A3PD-JD-F-DMicron Technology |
IC DRAM 24GBIT PARALLEL 933MHZ |
|
|
M29W128GL70ZA3EMicron Technology |
IC FLASH 128MBIT PARALLEL 64TBGA |
|
|
MT53D512M32D2NP-046 AAT ES:D TRMicron Technology |
IC DRAM 16GBIT 2133MHZ 200WFBGA |
|
|
70V06L35JRenesas Electronics America |
IC SRAM 128KBIT PARALLEL 68PLCC |
|
|
AS4C512M8D3B-12BANAlliance Memory, Inc. |
IC DRAM 4GBIT PARALLEL 78FBGA |
|
|
CB867-80053Cypress Semiconductor |
IC FLASH NOR |