English
简体中文
图片仅供参考，请联系我们获取真实图片
| 类型 | 描述 |
|---|---|
| 系列: | - |
| 包裹: | Tape & Reel (TR) |
| 零件状态: | Obsolete |
| 内存类型: | Volatile |
| 内存格式: | SRAM |
| 技术: | SRAM - Dual Port, Asynchronous |
| 内存大小: | 16Kb (2K x 8) |
| 内存接口: | Parallel |
| 时钟频率: | - |
| 写周期时间 - 字，页: | 55ns |
| 访问时间: | 55 ns |
| 电压 - 电源: | 4.5V ~ 5.5V |
| 工作温度: | -40°C ~ 85°C (TA) |
| 安装类型: | Surface Mount |
| 包/箱: | 64-LQFP |
| 供应商设备包: | 64-TQFP (10x10) |
UNIT2, 22/F., RICHMOND COMM. 香港九龙旺角亚皆老街109号大厦
办公时间：周一至周五，9:00-18:30(GMT+8)
电话: 00852-52612101
|
MT4A2G8NRE-83E:B TRMicron Technology |
IC SDRAM 16GB DDR4 FBGA |
|
|
CAT25160YE-GCSanyo Semiconductor/ON Semiconductor |
IC EEPROM 16KB SER SPI 8TSSOP |
|
|
CG7733AATCypress Semiconductor |
IC EMI REDUCTION PREMIS SSCG |
|
|
MT53B192M32D1SG-062 WT ES:A TRMicron Technology |
IC DRAM 6GBIT 1600MHZ FBGA |
|
|
W978H6KBQX2IWinbond Electronics Corporation |
IC DRAM 256MBIT PAR 168WFBGA |
|
|
M50FLW080ANB5GMicron Technology |
IC FLASH 8MBIT PARALLEL 32TSOP |
|
|
IS43LD16640C-25BLISSI (Integrated Silicon Solution, Inc.) |
IC DRAM 1GBIT PARALLEL 400MHZ |
|
|
MT53E256M16D1DS-046 AIT:BMicron Technology |
IC DRAM LPDDR4 WFBGA |
|
|
M29F040B70N1Micron Technology |
IC FLASH 4MBIT PARALLEL 32TSOP |
|
|
MT42L64M64D2LL-18 WT:C TRMicron Technology |
IC DRAM 4GBIT PARALLEL 216FBGA |
|
|
MT41K256M16V80AWC1Micron Technology |
IC DRAM 4GBIT PARALLEL DIE |
|
|
7025L55JI8Renesas Electronics America |
IC SRAM 128KBIT PARALLEL 84PLCC |
|
|
MTFC128GAPALNS-AIT ESMicron Technology |
IC FLASH 1TB MMC 153TFBGA |
